Semiconductor Detector Study for Detecting Fusion Neutrons using Geant4 Simulations

Accurate neutron flux measurements in fusion reactors are essential, order to determine the feasibility and progress of reaction as well for safety issues. Semiconductor detectors exhibit promising characteristics operation extreme environmental conditions reactors. Silicon, Diamond Silicon Carbide most studied anticipated materials constructing with high efficiency irradiation resistance. The ITER reactor is expected run D-D plasma near future, so detection 2.45 MeV neutrons appropriate great immediate importance. In present work study interactions a silicon, diamond silicon carbide detector was made, using GEANT4 [1] simulations, compare their response. An experimental will follow at production facility TANDEM accelerator I.N.P.P. NCSR “Demokritos”, provided by CIVIDEC Instrumentation GmbH, geometry simulations built accordingly. A quasi-monoenergetic beam produced through 3H(p,n) reactions TiT target. Due low cross section reaction, biasing techniques were implemented simulation increase counting rate thus producing realistic results. These studied, various tests parameters affecting choice factor shown discussed.